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Electronic transport and optical properties of thin oxide films

Identifieur interne : 004253 ( Main/Repository ); précédent : 004252; suivant : 004254

Electronic transport and optical properties of thin oxide films

Auteurs : RBID : Pascal:10-0372280

Descripteurs français

Pascal (Inist)
- Propriété transport, Propriété optique, Couche mince, Film optique, Coefficient absorption, Bande interdite, Mesure électrique, Conductivité électrique, Pouvoir thermoélectrique, Transition métal isolant, Transition métal semiconducteur, Dépendance température, Température transition, Bande interdite photonique, Oxyde d'étain, Oxyde d'indium, Oxyde de zinc, ZnO, 7866, 7361, 7130.

English descriptors

KwdEn :
- Absorption coefficients, Electrical conductivity, Electrical measurement, Energy gap, Indium oxide, Metal-insulator transition, Optical films, Optical properties, Photonic band gap, Semiconductor metal transition, Temperature dependence, Thermoelectric power, Thin films, Tin oxide, Transition temperature, Transport properties, Zinc oxide.

Abstract

In this work, we present optical characterization of films of two transparent conductive oxides (ITO: indium tin oxide and ZnO: zinc oxide) including absorption coefficient and optical gap energy. We have also investigated the transport properties of ITO and ZnO films through measurements of electrical conductivity and thermoelectric power versus temperature. These measurements enabled us to investigate conduction mechanisms for metal-nonmetal transitions. Undoped ZnO thin films show a metal-semiconductor transition at temperatures beyond 350 K. We have conducted a similar study on ITO films where we demonstrated, for the first time, the existence of a conductivity transition below 400 K, which indicates a high absolute thermoelectric power at temperatures above the transition temperature.

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Le document en format XML

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<author><name sortKey="El Amrani, A" uniqKey="El Amrani A">A. El Amrani</name>
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<country>France</country>
<placeName><region type="region" nuts="2">Limousin</region>
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<author><name sortKey="Hijazi, F" uniqKey="Hijazi F">F. Hijazi</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>XLIM UMR 6172 - Université de Limoges/CNRS 123 avenue Albert Thomas</s1>
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<placeName><region type="region" nuts="2">Limousin</region>
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<author><name sortKey="Lucas, B" uniqKey="Lucas B">B. Lucas</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>XLIM UMR 6172 - Université de Limoges/CNRS 123 avenue Albert Thomas</s1>
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<author><name sortKey="Boucle, J" uniqKey="Boucle J">J. Boucle</name>
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<author><name sortKey="Aldissi, M" uniqKey="Aldissi M">M. Aldissi</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>XLIM UMR 6172 - Université de Limoges/CNRS 123 avenue Albert Thomas</s1>
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<publicationStmt><idno type="inist">10-0372280</idno>
<date when="2010">2010</date>
<idno type="stanalyst">PASCAL 10-0372280 INIST</idno>
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<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption coefficients</term>
<term>Electrical conductivity</term>
<term>Electrical measurement</term>
<term>Energy gap</term>
<term>Indium oxide</term>
<term>Metal-insulator transition</term>
<term>Optical films</term>
<term>Optical properties</term>
<term>Photonic band gap</term>
<term>Semiconductor metal transition</term>
<term>Temperature dependence</term>
<term>Thermoelectric power</term>
<term>Thin films</term>
<term>Tin oxide</term>
<term>Transition temperature</term>
<term>Transport properties</term>
<term>Zinc oxide</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Propriété transport</term>
<term>Propriété optique</term>
<term>Couche mince</term>
<term>Film optique</term>
<term>Coefficient absorption</term>
<term>Bande interdite</term>
<term>Mesure électrique</term>
<term>Conductivité électrique</term>
<term>Pouvoir thermoélectrique</term>
<term>Transition métal isolant</term>
<term>Transition métal semiconducteur</term>
<term>Dépendance température</term>
<term>Température transition</term>
<term>Bande interdite photonique</term>
<term>Oxyde d'étain</term>
<term>Oxyde d'indium</term>
<term>Oxyde de zinc</term>
<term>ZnO</term>
<term>7866</term>
<term>7361</term>
<term>7130</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">In this work, we present optical characterization of films of two transparent conductive oxides (ITO: indium tin oxide and ZnO: zinc oxide) including absorption coefficient and optical gap energy. We have also investigated the transport properties of ITO and ZnO films through measurements of electrical conductivity and thermoelectric power versus temperature. These measurements enabled us to investigate conduction mechanisms for metal-nonmetal transitions. Undoped ZnO thin films show a metal-semiconductor transition at temperatures beyond 350 K. We have conducted a similar study on ITO films where we demonstrated, for the first time, the existence of a conductivity transition below 400 K, which indicates a high absolute thermoelectric power at temperatures above the transition temperature.</div>
</front>
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<fA05><s2>518</s2>
</fA05>
<fA06><s2>16</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Electronic transport and optical properties of thin oxide films</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the EMRS 2009 Spring Meeting Symposium H: Synthesis, Processing and Characterization of Nanoscale Multi Functional Oxide Films II</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>EL AMRANI (A.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>HIJAZI (F.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>LUCAS (B.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>BOUCLE (J.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>ALDISSI (M.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>CRACIUN (Valentin)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>GUILLOUX-VIRY (Maryline)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="03" i2="1"><s1>ALEXE (Marin)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="04" i2="1"><s1>COSTA KRÄMER (José L.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="05" i2="1"><s1>MOSNIER (Jean-Paul)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>XLIM UMR 6172 - Université de Limoges/CNRS 123 avenue Albert Thomas</s1>
<s2>87060 Limoges</s2>
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<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>National Institute for Laser, Plasma and Radiation Physics</s1>
<s2>Bucharest</s2>
<s3>ROU</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>University of Florida</s1>
<s3>USA</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="03"><s1>University of Rennes 1</s1>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
</fA15>
<fA15 i1="04"><s1>Max Planck Institute of Microstructure Physics</s1>
<s2>Halle</s2>
<s3>DEU</s3>
<sZ>3 aut.</sZ>
</fA15>
<fA15 i1="05"><s1>Instituto de Microelectronica de Madrid</s1>
<s3>ESP</s3>
<sZ>4 aut.</sZ>
</fA15>
<fA15 i1="06"><s1>Dublin City University</s1>
<s3>IRL</s3>
<sZ>5 aut.</sZ>
</fA15>
<fA18 i1="01" i2="1"><s1>European Materials Research Society (EMRS)</s1>
<s2>Strasbourg</s2>
<s3>FRA</s3>
<s9>org-cong.</s9>
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<fA20><s1>4582-4585</s1>
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<fA21><s1>2010</s1>
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<fA23 i1="01"><s0>ENG</s0>
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<fA44><s0>0000</s0>
<s1>© 2010 INIST-CNRS. All rights reserved.</s1>
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<fA45><s0>22 ref.</s0>
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<fA47 i1="01" i2="1"><s0>10-0372280</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Thin solid films</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>In this work, we present optical characterization of films of two transparent conductive oxides (ITO: indium tin oxide and ZnO: zinc oxide) including absorption coefficient and optical gap energy. We have also investigated the transport properties of ITO and ZnO films through measurements of electrical conductivity and thermoelectric power versus temperature. These measurements enabled us to investigate conduction mechanisms for metal-nonmetal transitions. Undoped ZnO thin films show a metal-semiconductor transition at temperatures beyond 350 K. We have conducted a similar study on ITO films where we demonstrated, for the first time, the existence of a conductivity transition below 400 K, which indicates a high absolute thermoelectric power at temperatures above the transition temperature.</s0>
</fC01>
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<fC02 i1="03" i2="3"><s0>001B70A30</s0>
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<fC03 i1="01" i2="X" l="FRE"><s0>Propriété transport</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Transport properties</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Propiedad transporte</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Propriété optique</s0>
<s5>02</s5>
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<fC03 i1="02" i2="3" l="ENG"><s0>Optical properties</s0>
<s5>02</s5>
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<fC03 i1="03" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>03</s5>
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<fC03 i1="03" i2="3" l="ENG"><s0>Thin films</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Film optique</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Optical films</s0>
<s5>04</s5>
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<fC03 i1="05" i2="3" l="FRE"><s0>Coefficient absorption</s0>
<s5>05</s5>
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<fC03 i1="05" i2="3" l="ENG"><s0>Absorption coefficients</s0>
<s5>05</s5>
</fC03>
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<s5>06</s5>
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<fC03 i1="06" i2="3" l="ENG"><s0>Energy gap</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Mesure électrique</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Electrical measurement</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Medida eléctrica</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Conductivité électrique</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Electrical conductivity</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Pouvoir thermoélectrique</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Thermoelectric power</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Transition métal isolant</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Metal-insulator transition</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Transition métal semiconducteur</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Semiconductor metal transition</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Transición metal semiconductor</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Dépendance température</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Temperature dependence</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Température transition</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Transition temperature</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Bande interdite photonique</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Photonic band gap</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Oxyde d'étain</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Tin oxide</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Estaño óxido</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Oxyde de zinc</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Zinc oxide</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Zinc óxido</s0>
<s5>17</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>ZnO</s0>
<s4>INC</s4>
<s5>46</s5>
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<fC03 i1="19" i2="3" l="FRE"><s0>7866</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>7361</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>7130</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fN21><s1>242</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>EMRS 2009 Spring Meeting. Symposium H "Synthesis, Processing and Characterization of Nanoscale Multi Functional Oxide Films"</s1>
<s3>Strasbourg FRA</s3>
<s4>2009-06-08</s4>
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Electronic transport and optical properties of thin oxide films

Electronic transport and optical properties of thin oxide films

Descripteurs français

English descriptors

Abstract

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